R&D Plan in 2008

1.Wide temperature and high saturation material development

2.High μ and wide passband material development

3.Ni-Zn low αF material development

Achievement in 2007

1.A061 wide temperature and high μ material for Lan application

2.N07 wide temperature and low THD material for telecom application

3.N5 EMI suppression material

4.Ni-Zn low loss power material(k081、K12)

5.Ni-Zn high saturation flux density material(B25、B30、B45、B60、B90)