R&D Plan in 2010
1.Improved wide temperature and high saturation material
2.High Tc and high μ material development
3.Improved Ni-Zn low αF material
4.Ni-Zn high stress resistance material development
5.EMI Flexible Sheet development
Achievement in 2009
1.Wide temperature and high saturation material(P47)
2.High frequency(up to 3MHz) power material
3. Ni-Zn low αF material(F50、F51)
4.Wideband EMI suppression material(N51)