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Product Introduction
ACME offers an accomplished portfolio of Silicon Carbide (SiC) powders, including N-type, Semi-Insulating, and Fine SiC powders, tailored to meet the diverse needs of advanced industries. Our powders are produced using an eco-friendly, low energy consumption process, aligning with sustainable manufacturing goals.
We have optimized particle morphology and distribution to facilitate smoother post-processing, enhancing compatibility with downstream applications such as wafer fabrication, sintering, and composite integration.
Silicon Carbide is renowned for its exceptional thermal conductivity, high breakdown electric field, wide bandgap, and mechanical robustness, making it a leading material in next-generation technologies.
N-Type SiC
N-type Silicon Carbide (SiC) powder is engineered for high-performance applications requiring superior electrical conductivity and thermal stability. With an advanced particle morphology and a dominant 6H polytype composition exceeding 90%, this powder offers excellent crystalline uniformity, making it ideal for epitaxial growth and other semiconductor processes.
Characteristics Unit ASH1A-6S ASH1-6S ASH2-6S Analysis Method
Particle Size (D50) μm 300 300 500 Laser Diffraction
Total Nitrogen ppm <25 <25 IGA (Instrumental Gas Analysis)
Total Oxygen ppm <100 <100
Apparent Density g/cm³ 1.7 1.3
Semi-insulating SiC
Semi-insulating Silicon Carbide (SiC) powder is a critical material for high-frequency and optoelectronic applications, offering exceptional electrical isolation, thermal stability, and mechanical strength. With the rapid growth of AR and VR glasses, as well as other advanced photonic devices, the demand for high-purity, semi-insulating SiC continues to rise.
ACME is dedicated to maintaining nitrogen content below 1 ppm and achieving optimal particle size distribution, both of which are crucial for the growth of single crystals in ideal semi-insulating SiC.
Characteristics Unit U-HPSI-1 U-HPSI-4 Analysis Method
Particle Size (D50) μm 450 375 Laser Diffraction
Total Nitrogen ppm <1 (Typical 0.5) SIMS
Apparent Density g/cm³ 1.2 1.6
Fine SiC
ACME’s Fine Silicon Carbide (SiC) powder is engineered for precision ceramic applications that demand high purity and excellent particle control. This powder is ideal for manufacturing critical semiconductor components in vacuum environments.

Also check Application Fields for more information
Characteristics Unit SC4H-D005 SC4H-D060 Analysis Method
Particle Size (D50) μm 0.1~1 1~6 Laser Particle Size Analyzer
Purity % > 99.999 > 99.999 ICP/GDMS